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Proceedings Paper

Advances in in-situ metrology during epitaxy of UV-LEDs and related optical devices (Conference Presentation)
Author(s): Kolja Haberland

Paper Abstract

The epitaxial growth of UV-C-LED-structures in metal organic vapor phase epitaxy is very challenging. To control and improve the growth process, optical in-situ metrology is therefore indispensable. However, the in-situ metrology itself is also affected by some of the process related circumstances such as patterned substrates or thin layer thickness. In this talk we will provide insight into the challenges and benefits of in-situ metrology during growth of UV-C-LED-structures and we will show how these issues can be overcome. We will also show, that these advanced techniques can also be used to improve epitaxy of other optical devices besides UV-LEDs.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 1130219 (9 March 2020); doi: 10.1117/12.2542676
Show Author Affiliations
Kolja Haberland, LayTec AG (Germany)


Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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