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Nonlinear terahertz metamaterials absorber based on InAs
Author(s): Miao Chen; Wei Yan; Liuwen Zeng; Fuhua Yang; Zhaofeng Li
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Paper Abstract

In this paper we present a novel nonlinear metamaterials absorber consisting of a gold cross structure resonator, and a ndoped InAs ground plane separated by a GaAs spacer. When the incident field strength rises from 60𝑘𝑉 ∙ 𝑐𝑚−1 to 300𝑘𝑉 ∙ 𝑐𝑚−1, the absorption at resonance frequency is reduced by 70% due to the nonlinear response of n-doped InAs ground plane. To the best of our knowledge, the modulation depth of our design is higher than previous works on nonlinear absorber. The mechanism behind the modulation is demonstrated by transmission line model analysis and numerical simulations. The proposed structure eliminates the side effect brought by the substrate and can be developed to dual-band nonlinear metamaterials absorber. Such flexible design may find its applications in ultrafast terahertz optics and passive protection of sensitive electromagnetic devices.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113341K (18 December 2019); doi: 10.1117/12.2542528
Show Author Affiliations
Miao Chen, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Wei Yan, Institute of Semiconductors (China)
Liuwen Zeng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Fuhua Yang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhaofeng Li, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 11334:
AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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