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Proceedings Paper

Sub-diffraction direct laser writing by a combination of STED and ESA
Author(s): S. Engel; C. Wenisch; S. Gräf; F. A. Müller
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Paper Abstract

We introduce a novel sub-diffraction direct laser writing process and discuss its advantages compared to common lithographic methods. The fundamental idea is based on the combination of a Stimulated Emission Depletion (STED) with the effect of an Excited State Absorption (ESA). Analogous to the STED-microscopy, an excited spatial volume below the diffraction limit is created. The modified optical properties of this volume compared to the non-excited surrounding regions are used for the subsequent spatially restricted processing based on an ESA. In combination with a required STED- and ESA-compatibility, a variety of potentially suitable processes for excitation, stimulated emission, and ESA are presented for various materials. Here, direct semiconductors such as ZnO are of particular interest for a STED-process. The second essential requirement, an ESA-based processing, was demonstrated experimentally for the first time at a 200 nm thinn ZnO-layer sputtered on a fused silica substrate. For this purpose, an experimental setup consisting of two ns-lasers, one for excitation and one for the ESA-based processing, as well as a variable time delay, was used.

Paper Details

Date Published: 2 March 2020
PDF: 8 pages
Proc. SPIE 11268, Laser-based Micro- and Nanoprocessing XIV, 112680D (2 March 2020); doi: 10.1117/12.2542527
Show Author Affiliations
S. Engel, Friedrich Schiller Univ. (Germany)
C. Wenisch, Friedrich Schiller Univ. (Germany)
S. Gräf, Friedrich Schiller Univ. (Germany)
F. A. Müller, Friedrich Schiller Univ. (Germany)

Published in SPIE Proceedings Vol. 11268:
Laser-based Micro- and Nanoprocessing XIV
Udo Klotzbach; Akira Watanabe; Rainer Kling, Editor(s)

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