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Proceedings Paper

Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs
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Paper Abstract

Multilayer strain-coupled P-i-P quantum dot infrared photodetectors (QDIPs) with different configurations are studied. Photoluminescence (PL) and photoluminescence excitation (PLE) measurements are carried out to investigate the improvement in the optical performance of these proposed devices. The samples are grown with a different growth strategy to minimize the dot size dispersion compared to the conventional QDIPs. Also, the effect of In0.15Ga0.85As strain reducing layer (SRL) in the proposed samples are analyzed. We report a monomodal PL spectrum and reduction of 28 meV in full-width half maximum (FWHM) of the ground state (GS) peak for the proposed structure in comparison with the conventional one. The monomodal behavior of the structures is confirmed by mapping deconvoluted PL peaks and PLE results. The GS peak of the conventional QDIP is observed at 1.2 eV, whereas the same for the proposed sample is at 1.18 eV. Further redshift in the peak position is achieved (1.14 eV) through the introduction of SRL, which also has a lesser FWHM than the conventional sample. A difference of 69 meV and 73 meV between GS and the first excited state (ES1) peak is observed in the PLE spectra of the conventional and proposed structure, respectively. However, two resolved excited state peaks (ES1 and ES2) are visible in the case of SRL-incorporated structure, which are 69.6 meV and 138 meV away from the GS peak. The proposed QD heterostructures with applied growth strategy and P-i-P configurations are expected to perform better at higher temperatures along with improved absorption efficiency.

Paper Details

Date Published: 2 March 2020
PDF: 9 pages
Proc. SPIE 11291, Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 112910O (2 March 2020); doi: 10.1117/12.2542403
Show Author Affiliations
Suryansh Dongre, Indian Institute of Technology Bombay (India)
Debiprasad Panda, Indian Institute of Technology Bombay (India)
Sanowar Alam Gazi, Indian Institute of Technology Bombay (India)
Debabrata Das, Indian Institute of Technology Bombay (India)
Ravinder Kumar, Indian Institute of Technology Bombay (India)
Nivedita Pandey, Indian Institute of Technology Bombay (India)
Abhishek Kumar, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 11291:
Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII
Diana L. Huffaker; Holger Eisele, Editor(s)

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