Share Email Print

Proceedings Paper

Structural, electronic, and optical properties of type II heterostructure based on WS2/black phosphorene
Author(s): Abhishek Kumar; Nivedita Pandey; Suryansh Dongre; Subhananda Chakrabarti
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Structural, electronic and optical properties of WS2/Black Phosphorene heterostructure have been explored using the abinitio simulation based on density functional theory (DFT). An interlayer separation of 3.1 Å at equilibrium is found for the optimized heterostructure with the lowest binding energy. This suggests strong van-der Waal (vdW) interconnections in the relaxed heterostructure. The electronic properties of the optimized heterostructure are studied by calculating the band structure and density of states (DOS) plots. Band structure calculation for the monolayer WS2/Black Phosphorene heterostructure shows an indirect energy gap behaviour having value around 0.79 eV. To explore the optical characteristics of the relaxed heterostructure, Kubo-Greenwood formalism in a combination with DFT is used. The absorption coefficient, Dielectric constant and refractive index are calculated for the heterostructure. The absorption coefficient spectrum lies in the ultraviolet region for individual WS2 monolayer and black phosphorene. While the relaxed heterostructure based on monolayer WS2/Black Phosphorene shows its absorption coefficient spectrum in both visible (~380-420 nm) and ultraviolet region. Redshift phenomena have been observed for the relaxed heterostructure. Other optical properties like refractive index and dielectric constant are also in accordance with the absorption coefficient. Further, Type II energy band alignment has been found for the relaxed heterostructure. These calculated results suggest its potential applications in the designing of novel optoelectronic devices.

Paper Details

Date Published: 2 March 2020
PDF: 6 pages
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112741S (2 March 2020); doi: 10.1117/12.2542274
Show Author Affiliations
Abhishek Kumar, Indian Institute of Technology Bombay (India)
Nivedita Pandey, Indian Institute of Technology Bombay (India)
Suryansh Dongre, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)

Published in SPIE Proceedings Vol. 11274:
Physics and Simulation of Optoelectronic Devices XXVIII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?