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Electronic, optical properties, and effective masses of AlxGa1−xAs and InyGa1−yAs based on the first principle
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Paper Abstract

The band structure, density of states, optical properties, effective masses and loss function of AlxGa1−xAs and InyGa1−yAs were performed by the first-principles method within the local density approximation. The calculated direct band gap of the AlAs, Al0.5Ga0.5As, GaAs, In0.5Ga0.5As and InAs were 1.608 eV, 1.34eV, 1.02eV, 0.646eV and 0.316eV at G point, which were direct bandgap semiconductor materials. In addition, dielectric functions, the absorption function, refractive index, loss function and effective mass were analyzed in detail. The effective masses of AlxGa1−xAs and InyGa1−yAs were small, so they have high carrier mobility. These results make them to be promising candidates for future electronics.

Paper Details

Date Published: 20 December 2019
PDF: 8 pages
Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 1120904 (20 December 2019); doi: 10.1117/12.2542227
Show Author Affiliations
Congcong Wang, Beijing Univ. of Technology (China)
Chong Li, Beijing Univ. of Technology (China)
Xuesheng Liu, Beijing Univ. of Technology (China)
Tian Lan, Beijing Univ. of Technology (China)
Guangzheng Zhou, Beijing Univ. of Technology (China)
Jing Li, Beijing Univ. of Technology (China)
Rui Huang, Beijing Univ. of Technology (China)
Ying Li, Beijing Univ. of Technology (China)
Zhiyong Wang, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 11209:
Eleventh International Conference on Information Optics and Photonics (CIOP 2019)
Hannan Wang, Editor(s)

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