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Proceedings Paper

Crystal growth and optical property in core-shell structure consisting of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) (Conference Presentation)
Author(s): Satoshi Kamiyama; Lu Weifang; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Paper Abstract

The three-dimensional core-shell structure consisting of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) is thought to be promising for high-performance light-emitting devices, because of its advantages such as non-polar surface orientation, dislocation-free and tolerance of misfit strain due to small size crystal. However, their crystal growth mechanism and its crystalline quality have not yet fully understood, and they are still under the basic considerations. The key issues in the nanowire/MQS structure are its crystalline quality and shape control, which are greatly dependent on the growth condition. Thus, in this paper, selective growth of nanowire/MQS and its optical properties are described.

Paper Details

Date Published: 17 March 2020
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Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020E (17 March 2020); doi: 10.1117/12.2542224
Show Author Affiliations
Satoshi Kamiyama, Meijo Univ. (Japan)
Lu Weifang, Meijo Univ. (Japan)
Tetsuya Takeuchi, Meijo Univ. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)


Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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