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The research of InSb on Si avalanche photodiode
Author(s): Hongling Peng; Yingqiang Xu; Wanhua Zheng
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Paper Abstract

We demonstrate a bonding InSb/Si wafer and its application in APD. An InSb/Si APD with high gain and high bandwidth is discussed. Bonding wafer of InSb and Si is suitable to fabricate InSb/Si APD. The InSb/Si APD will have better performance than InSb APD, and it is suited for the detection in passive imaging and active imaging operation.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113340E (18 December 2019); doi: 10.1117/12.2542193
Show Author Affiliations
Hongling Peng, Institute of Semiconductors (China)
Yingqiang Xu, Institute of Semiconductors (China)
Wanhua Zheng, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 11334:
AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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