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Proceedings Paper

Directly modulated semiconductor lasers with surface high-order grating fabricated by standard photolithography
Author(s): Pijie Ma; Fengxin Dong; Anjin Liu; Wanhua Zheng
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Paper Abstract

Directly modulated semiconductor lasers (DMLs) with surface high-order grating have been designed, fabricated and measured. The output powers under different temperatures were measured, and there are almost no kinks among all the light-power curves. The threshold current is 22 mA with a slope efficiency of 0.21 mW/mA at 25 ℃. The side-mode suppression ratio (SMSR) over 30 dB is achieved. The wavelength red-shifting caused by current-induced heating is at a ratio of 0.03 nm/mA. Small signal response of this kind of lasers with surface high-order grating was measured at 25 ℃ and the -3 dB bandwidth is 11 GHz.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113340D (18 December 2019); doi: 10.1117/12.2542187
Show Author Affiliations
Pijie Ma, Institute of Semiconductors (China)
Fengxin Dong, Institute of Semiconductors (China)
Anjin Liu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Wanhua Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11334:
AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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