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Proceedings Paper

High peak power laser diodes at 1.5 um with integrated wavelength locking element (Conference Presentation)
Author(s): Antti Aho; Jukka Viheriälä; Heikki Virtanen; Topi Uusitalo; Mervi Koskinen; Jarno Reuna; Mircea Guina

Paper Abstract

We report on the development of high peak-power laser diodes emitting in the 1.5 µm wavelength band. Two design approaches, broad-area laser diodes and tapered laser diodes, are described, both with integrated wavelength locking using distributed Bragg reflector. The peak output power of the broad-area components and tapered components is 6.1 W and 4.6 W, respectively. The output spectra of both component types are narrow with less than 0.3 nm full width at half-maximum, and due to the grating the emission wavelength is resistant to drift caused by temperature changes.

Paper Details

Date Published: 9 March 2020
Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620E (9 March 2020); doi: 10.1117/12.2542095
Show Author Affiliations
Antti Aho, Tampere Univ. (Finland)
Jukka Viheriälä, Tampere Univ. (Finland)
Heikki Virtanen, Tampere Univ. (Finland)
Topi Uusitalo, Tampere Univ. (Finland)
Mervi Koskinen, Tampere Univ. (Finland)
Jarno Reuna, Tampere Univ. (Finland)
Mircea Guina, Tampere Univ. (Finland)

Published in SPIE Proceedings Vol. 11262:
High-Power Diode Laser Technology XVIII
Mark S. Zediker, Editor(s)

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