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Proceedings Paper

The effects of x-ray irradiation on a-IGZO TFTs used for active pixel sensor
Author(s): Shan Yeh; Ya-Hsiang Tai
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Paper Abstract

In this paper, the behavior of the amorphous indium–gallium–zinc-oxide (a-IGZO) thin film transistors (TFTs) after X-ray irradiation is analyzed. With the increase of irradiation dose, the a-IGZO TFTs show more negative shifts of threshold voltage (Vth), while both the field effect mobility and subthreshold swing (S.S.) keep fairly constant. Not like being a switch in passive pixel sensor (PPS), the Vth shift of the TFT in active pixel sensor (APS) can result in variation in the output signal. With techniques of compensating Vth shift, a-IGZO TFTs are more suitable for the application of Xray image sensors from the viewpoint of stability.

Paper Details

Date Published: 16 March 2020
PDF: 7 pages
Proc. SPIE 11312, Medical Imaging 2020: Physics of Medical Imaging, 113123X (16 March 2020); doi: 10.1117/12.2542004
Show Author Affiliations
Shan Yeh, National Chiao Tung Univ. (Taiwan)
Ya-Hsiang Tai, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 11312:
Medical Imaging 2020: Physics of Medical Imaging
Guang-Hong Chen; Hilde Bosmans, Editor(s)

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