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Proceedings Paper

Red surface-emitting SLEDs
Author(s): Bruno Jentzsch; Alvaro Gomez-Iglesias; Alexander Tonkikh; Bernd Witzigmann
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Paper Abstract

Surface-emitting InGaAlP SLEDs that are based on in-plane amplification along a horizontal waveguide are demonstrated. Total internal reflection at tilted etched micromirrors are used for the deflection of optical modes normal to the chip surface. Applying a bonding process of the etched wafer onto a new carrier, light can be emitted through the surface that was originally covered by the growth substrate. Depending on the waveguide geometry superluminescence as well as lasing operation is observed. In superluminescence operation an emission spectrum with a FWHM of 10nm centered at 637nm is obtained. The peak output power of the amplified spontaneous emission is up to ~ 200mW which corresponds to a WPE of ~ 6 %. In case of lasing (λ ~ 639 nm) a peak output power larger than 1000mW at a WPE that exceeds 20% is achieved. In addition, an array configuration with radially aligned waveguides that contribute to a common far field is investigated as well.

Paper Details

Date Published: 25 February 2020
PDF: 8 pages
Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020Y (25 February 2020); doi: 10.1117/12.2541968
Show Author Affiliations
Bruno Jentzsch, Univ. Kassel (Germany)
OSRAM Opto Semiconductors GmbH (Germany)
Alvaro Gomez-Iglesias, OSRAM Opto Semiconductors GmbH (Germany)
Alexander Tonkikh, OSRAM Opto Semiconductors GmbH (Germany)
Bernd Witzigmann, Univ. Kassel (Germany)


Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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