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Research on single pixel modeling and projected infrared images similarity of MOS resistor array
Author(s): Siliang Sun; Yong Huang; Bin Ma; Ren Chen; Li Sun
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Paper Abstract

MOS resistor arrays are the core devices in infrared hardware-in-the-loop simulation, and the imaging quality is directly related to the accuracy and confidence of the final simulation results. At present, a series of problems, such as image degradation and coupling distortion, will occur when the simulated digital infrared signal enters the MOS resistor array. Therefore, it is necessary to analyze the imaging principles and energy transfer process of the MOS resistor array based on its imaging mechanism, and to establish a process and radiation model of a single pixel, to represent its own physical characteristics. A similarity framework between input and output image signals was constructed, and the relationship between signals was tested and verified by image similarity algorithms and a multi-attribute fusion algorithm. The proposed similarity framework could provide an objective evaluation method to measure the MOS resistor array imaging quality. These achievements could provide an important theoretical basis for future research on coupling characteristics, reverse correction models and non-uniformity correction of larger scale MOS resistor arrays, while having significant value in practical engineering applications.

Paper Details

Date Published: 18 December 2019
PDF: 21 pages
Proc. SPIE 11338, AOPC 2019: Optical Sensing and Imaging Technology, 113380K (18 December 2019); doi: 10.1117/12.2541592
Show Author Affiliations
Siliang Sun, Northwestern Polytechnical Univ. (China)
Yong Huang, Northwestern Polytechnical Univ. (China)
Bin Ma, Shanghai Institute of Technical Physics (China)
Ren Chen, AVIC Xi'an Flight Automatic Control Research Institute (China)
Li Sun, Northwestern Polytechnical Univ. (China)


Published in SPIE Proceedings Vol. 11338:
AOPC 2019: Optical Sensing and Imaging Technology
John E. Greivenkamp; Jun Tanida; Yadong Jiang; HaiMei Gong; Jin Lu; Dong Liu, Editor(s)

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