Share Email Print

Proceedings Paper

Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy
Author(s): Akira Uedono; Marcel Dickmann; Werner Egger; Christoph Hugenschmidt; Shoji Ishibashi; Shigefusa F. Chichibu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Vacancy-type defects in Mg-implanted GaN were probed using monoenergetic positron beams. Mg+ ions were implanted to provide box profiles with Mg concentrations [Mg] of 1017-1019 cm-3. For as-implanted samples, the major defect species was determined to be Ga-vacancy (VGa) related defects such as divacancy (VGaVN) and/or their complexes with impurities. For Mg-implanted samples, an agglomeration of vacancies started at 800-1000°C annealing, leading to the formation of vacancy clusters such as (VGaVN)3. For the sample with [Mg]=1019 cm-3, the trapping rate of positrons to the vacancies decreased with increasing annealing temperature (≥1100°C), which was attributed to the change in the charge state of vacancy-type defects from neutral to positive (or negative to neutral) due to the activation of Mg. For Mg- and H-implanted samples, the hydrogenation of vacancy-type defects started after 800°C annealing. Comparing with the annealing behavior of defects for the samples without H-implantation, the clustering of vacancy-type defects was suppressed, which can be attributed to the interaction between Mg, H, and vacancies.

Paper Details

Date Published: 16 February 2020
PDF: 8 pages
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800C (16 February 2020); doi: 10.1117/12.2541518
Show Author Affiliations
Akira Uedono, Univ. of Tsukuba (Japan)
Marcel Dickmann, Univ. der Bundeswehr München (Germany)
Werner Egger, Univ. der Bundeswehr München (Germany)
Christoph Hugenschmidt, Technische Univ. München (Germany)
Shoji Ishibashi, National Institute of Advanced Industrial Science and Technology (Japan)
Shigefusa F. Chichibu, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?