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Electronic and optical properties of Dirac semimetals in InAs/GaInSb superlattice nanostructures
Author(s): Mikhail Patrashin; Norihiko Sekine; Kouichi Akahane; Akifumi Kasamatsu; Iwao Hosako
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Paper Abstract

In this work we discuss technological aspects of creating a linear energy dispersion spectrum of charge carriers in semiconductor materials and report on the experimental realization of the topological Dirac semimetals (DSM) in nanostructurally engineered zero-gap InAs/GaInSb superlattices (SL) [1]. The SL samples are synthesized by molecular beam epitaxy, which provides monolayer accuracy for growing high-quality single-crystals on large area substrates. The prospects for designing the topological insulator (TI) SLs with the same approach and first results of experimental characterization of the TI candidates are also presented.

Paper Details

Date Published: 31 December 2019
PDF: 2 pages
Proc. SPIE 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019, 112010N (31 December 2019); doi: 10.1117/12.2541284
Show Author Affiliations
Mikhail Patrashin, National Institute of Information and Communications Technology (Japan)
Norihiko Sekine, National Institute of Information and Communications Technology (Japan)
Kouichi Akahane, National Institute of Information and Communications Technology (Japan)
Akifumi Kasamatsu, National Institute of Information and Communications Technology (Japan)
Iwao Hosako, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 11201:
SPIE Micro + Nano Materials, Devices, and Applications 2019
M. Cather Simpson; Saulius Juodkazis, Editor(s)

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