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Proceedings Paper

Photoluminescence properties of Er doped AS2S3 films deposited using RF co-sputtering and the impact of rapid thermal annealing
Author(s): Huma Latif; Kunlun Yan; Steve Madden
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Paper Abstract

This work reports the photoluminescence (PL) properties of Er doped AS2S3 films (at 0.1 mol% concentration) fabricated by RF co-sputtering. As sputtered films are shown to exhibit PL degradation only on exposure to the combination of green light and water vapour due to photo-incorporation of OH groups through film nanostructural pores. Rapid Thermal Annealing is investigated as a possible remedy to this issue.

Paper Details

Date Published: 30 December 2019
PDF: 3 pages
Proc. SPIE 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019, 112003K (30 December 2019); doi: 10.1117/12.2541262
Show Author Affiliations
Huma Latif, The Australian National Univ. (Australia)
Kunlun Yan, The Australian National Univ. (Australia)
Steve Madden, The Australian National Univ. (Australia)


Published in SPIE Proceedings Vol. 11200:
AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019
Arnan Mitchell; Halina Rubinsztein-Dunlop, Editor(s)

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