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Proceedings Paper

Improvement of CDU in implant level lithography with high topography
Author(s): Hang Fan; Fusheng Zhu
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Paper Abstract

In order to achieve some special functions, high topography is often introduced in the manufacturing process of chip, which will directly lead to the sharp change of critical dimension (CD), especially for the implant layers post poly process. In this paper, a scheme of reducing the CD range of implant level lithography is proposed. The numerical simulation is carried out through using Fourier optics theory, Fraunhofer diffraction formula and Abbe principle,then the experiment is designed. The simulation results indicate that for advanced process, such as 110nm and 130nm generation, the normalized image logarithmic slope (NILS) of aerial image in the resist on the wafer can be maximized by appropriately increasing numerical aperture (NA) as well as decreasing σ, then the inter-field critical dimension uniformity (CDU) can be greatly improved. The experimental results show that the CD range can be decreased about 41% for the topography of 3000Å, and the better improvement can be achieved for the topography of 1600Å, up to 50%. The research results of this paper provide potential guiding significance for CDU control in implant level lithography process with high topography.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11337, AOPC 2019: Optical Spectroscopy and Imaging, 1133706 (18 December 2019); doi: 10.1117/12.2541028
Show Author Affiliations
Hang Fan, CSMC Technologies Fab 1 Co., Ltd. (China)
Fusheng Zhu, CSMC Technologies Fab 1 Co., Ltd. (China)

Published in SPIE Proceedings Vol. 11337:
AOPC 2019: Optical Spectroscopy and Imaging
Jin Yu; Zhe Wang; Vincenzo Palleschi; Mengxia Xie; Yuegang Fu, Editor(s)

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