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Proceedings Paper

Dark current simulation of InAs/GaSb ii type super-lattice nBn detectors with equivalent material method
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Paper Abstract

The type-II InAs/GaSb superlattices have been recognized as popular materials for the third-generation infrared focal plane detectors. In recent years, the performances of the type ii superlattice infrared focal plane have been improved dramatically. High operating temperature can be achieved by using the monopolar barrier structure of InAs/GaSb type ii superlattice material system. In this paper, the nBn type (also known as Bariodes) mid-wavelength infrared detector based on InAs/GaSb type ii superlattice is studied. As the device has no depletion layer, the recombination and trap assisted tunneling effects are inhibited, and the dark currents are effectively reduced. Based on the equivalent material method, the relationship between the dark current and the doping concentration, thickness and composition of the barrier layer and absorption layer was analyzed in detail, and the optimal working condition was pointed out.

Paper Details

Date Published: 18 December 2019
PDF: 10 pages
Proc. SPIE 11338, AOPC 2019: Optical Sensing and Imaging Technology, 113380B (18 December 2019); doi: 10.1117/12.2541017
Show Author Affiliations
Chen Liu, Yunnan Univ. (China)
Hongxia Zhu, Yunnan Univ. (China)
Xueyan Yang, Yunnan Univ. (China)
Hui Zeng, Yunnan Univ. (China)
Jian Wang, Yunnan Univ. (China)
Yanli Shi, Yunnan Univ. (China)


Published in SPIE Proceedings Vol. 11338:
AOPC 2019: Optical Sensing and Imaging Technology
John E. Greivenkamp; Jun Tanida; Yadong Jiang; HaiMei Gong; Jin Lu; Dong Liu, Editor(s)

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