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Proceedings Paper

Laser writing of color centers in silicon carbide
Author(s): S. Castelletto; T. Katkus; S. Juodkazis
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Paper Abstract

In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.

Paper Details

Date Published: 31 December 2019
PDF: 4 pages
Proc. SPIE 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019, 1120112 (31 December 2019); doi: 10.1117/12.2540552
Show Author Affiliations
S. Castelletto, RMIT Univ. (Australia)
T. Katkus, Swinburne Univ. of Technology (Australia)
S. Juodkazis, Swinburne Univ. of Technology (Australia)

Published in SPIE Proceedings Vol. 11201:
SPIE Micro + Nano Materials, Devices, and Applications 2019
M. Cather Simpson; Saulius Juodkazis, Editor(s)

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