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Proceedings Paper

Electrical scanning probe microscopy approaches to investigate solar cell junctions and devices
Author(s): J. Alvarez; C. Marchat; A. Morisset; L. Dai; J.-P. Kleider; Raphaël Cabal; P. R. i Cabarrocas
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Paper Abstract

C-AFM and KPFM techniques have been applied to investigate advanced junctions that are currently involved in highly efficient silicon solar cells. Our first study focuses on silicon heterojunctions and notably hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) P/n or N/p heterostructures which band bending at the interface forms a 2D channel. This conductive channel was indeed evidenced for the first time by cross-sectional investigations by C-AFM confirming the analysis of macroscopic planar conductance measurements. A second example of nanoscale characterization concerns the passivating selective contacts consisting in a thin silicon oxide (SiOx) layer between the c-Si and a highly doped polysilicon (poly-Si) layer. The electrical carrier transport is here not limited by the oxide layer and it is assumed that tunnelling through the oxide and/or the presence of pinholes are the main competitive mechanisms. For this specific heterostructure KPFM reveals local surface potential drops of 15- 30 mV, which do not exist on samples without SiOx. These potential drops suggest the presence of pinholes that are formed during the poly-Si annealing process performed in the range of 700-900°C. Finally, in a third study, we concentrate on p-i-n radial junction (RJ) silicon nanowire (SiNW) devices that are investigated under illumination by KPFM, in the so-called surface photovoltage (SPV) technique. This work focuses on the possibility of extracting the open-circuit voltage (VOC) on single isolated SiNW RJ by local SPV measurements using different AFM tip shapes and illumination directions in order to minimize shadowing effects.

Paper Details

Date Published: 31 January 2020
PDF: 13 pages
Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112880U (31 January 2020); doi: 10.1117/12.2540422
Show Author Affiliations
J. Alvarez, Univ. Paris-Saclay, CentraleSupélec, CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Sorbonne Univ., CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Institut Photovoltaïque d’Ile-de-France (France)
C. Marchat, Univ. Paris-Saclay, CentraleSupélec, CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Sorbonne Univ., CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Institut Photovoltaïque d’Ile-de-France (France)
A. Morisset, Univ. Paris-Saclay, CentraleSupélec, CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Sorbonne Univ., CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Lab. of Homojunction Solar Cells, Institute of Technologies for New Energies, CEA-LITEN (France)
L. Dai, Univ. Paris-Saclay, CentraleSupélec, CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Sorbonne Univ., CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Lab. de Physique des Interfaces et des Chouches Minces, CNRS, Ecole Polytechnique (France)
J.-P. Kleider, Univ. Paris-Saclay, CentraleSupélec, CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Sorbonne Univ., CNRS, Lab. de Génie Electrique et Electronique de Paris (France)
Institut Photovoltaïque d’Ile-de-France (France)
Raphaël Cabal, Lab. of Homojunction Solar Cells, Institute of Technologies for New Energies, CEA-LITEN (France)
P. R. i Cabarrocas, Lab. de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 11288:
Quantum Sensing and Nano Electronics and Photonics XVII
Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili, Editor(s)

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