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Proceedings Paper

III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition
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Paper Abstract

We report the current progress of our development of near-ultraviolet (NUV) III-nitride vertical-cavity LED emitters and avalanche photodetectors grown by metalorganic chemical vapor deposition (MOCVD). The III-N emitters are designed to be UV vertical-cavity surface-emitting lasers operating at 369.5nm. We describe the development of the growth and processing of an air-gap/AlGaN distributed Bragg reflector (DBR) consisting of five-pairs of quarter-wavelength layers of Al0.12Ga0.88N and air-gap regions created by selective chemical etching. A 4-6λ cavity was employed in the laser structure. We also report on the electrical and optical emission characteristics of these microcavity emitters. The photodetectors are GaN- and AlGaN-based p-i-n avalanche photodiodes (APDs) designed for front-side illumination. We report on the electrical and optical detection characteristics of these photodetectors.

Paper Details

Date Published: 9 September 2019
PDF: 7 pages
Proc. SPIE 11086, UV and Higher Energy Photonics: From Materials to Applications 2019, 110860C (9 September 2019); doi: 10.1117/12.2540048
Show Author Affiliations
Russell D. Dupuis, Georgia Institute of Technology (United States)
Theeradetch Detchprohm, Georgia Institute of Technology (United States)
Hi-Hee Ji, Georgia Institute of Technology (United States)
Marzieh Bakhtiary-Noodeh, Georgia Institute of Technology (United States)
Hoon Jeong, Georgia Institute of Technology (United States)
Ping Chen, Georgia Institute of Technology (United States)
Shyh-Chiang Shen, Georgia Institute of Technology (United States)
Chuan-Wei Tsou, Georgia Institute of Technology (United States)
Karan Mehta, Georgia Institute of Technology (United States)
P. Douglas Yoder, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 11086:
UV and Higher Energy Photonics: From Materials to Applications 2019
Gilles Lérondel; Yong-Hoon Cho; Atsushi Taguchi; Satoshi Kawata, Editor(s)

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