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Proceedings Paper

Role of point-defect charging dynamics in quantum-well magneto-transport
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Paper Abstract

The defect corrections to the polarization and dielectric functions of conduction electrons in a quantum well are first calculated. Following this, we derive the first two moment equations from the semi-classical Boltzmann transport theory and apply them to explore defect effects on magneto-transport of electrons. In addition, we obtain analytically momentum-relaxation time and mobility tensor of electrons by using the defect-corrected polarization function. Based on quantum-statistical theory, we further investigate the defect capture and charging dynamics by employing a hydrogen-like quantum-mechanics model for point defects and going beyond a short-range δ-function for their probability functions. Finally, both the capture and relaxation rates, as well as the density for captured electrons, are studied as functions of temperature, subband-electron density and different types of defects, which can be utilized for quantifying burst noise in transistors and blinking noise in photo-detectors.

Paper Details

Date Published: 2 March 2020
PDF: 20 pages
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112740A (2 March 2020); doi: 10.1117/12.2540028
Show Author Affiliations
Danhong Huang, Air Force Research Lab. (United States)
Andrii Iurov, Medgar Evers College of CUNY (United States)
Godfrey Gumbs, Hunter College of CUNY (United States)
Fei Gao, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 11274:
Physics and Simulation of Optoelectronic Devices XXVIII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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