Share Email Print

Proceedings Paper

Techniques to achieve low series resistance, high photon absorption rate, and high quantum efficiency for photonic CMOS field effect transistors
Author(s): James N. Pan
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Very high switching speed can be achieved for Photonic CMOS transistors, using low-resistance, low forward voltage, high quantum efficiency lasers or light emitting diodes, and high photon absorption rate avalanche photo diodes. The MOSFET, laser, and photon sensor are integrated as one transistor. In this paper we will illustrate how to improve the performance of a photonic MOSFET with layout design, fabrication, and device technologies.

Paper Details

Date Published: 25 February 2020
PDF: 8 pages
Proc. SPIE 11283, Integrated Optics: Devices, Materials, and Technologies XXIV, 112831P (25 February 2020); doi: 10.1117/12.2539836
Show Author Affiliations
James N. Pan, American Enterprise and License Co. (United States)

Published in SPIE Proceedings Vol. 11283:
Integrated Optics: Devices, Materials, and Technologies XXIV
Sonia M. García-Blanco; Pavel Cheben, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?