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Development and characterization of nano film thickness standards
Author(s): Zhiguo Han; Faguo Liang; Suoyin Li; Yanan Feng; Xiaodong Zhang
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Paper Abstract

Film thickness is an important geometric parameter in semiconductor technology, and the accuracy of its magnitude affects directly the overall performance of the device. In order to accurately control and characterize the film thickness parameters, a set of 2nm~1000nm SiO2 film thickness standards were developed to carry out measurement technology research. Firstly, a method of growing SiO2 on pure Si wafer by a thermal oxidation process was used to develop a standard sample of the film thickness, and to evaluate the uniformity and stability. Secondly, the measurement model and method were studied, and the thickness of the film was characterized, based on the spectral ellipsometer. Finally, the uncertainty of measurement results to the standard are evaluated, based on the MCM simulation method. The results show that the uniformity of film thickness is better than 0.3nm, the stability is better than 0.2nm, and the uncertainty is 0.4nm~1.4nm, k=2.

Paper Details

Date Published: 18 November 2019
PDF: 8 pages
Proc. SPIE 11189, Optical Metrology and Inspection for Industrial Applications VI, 111890N (18 November 2019); doi: 10.1117/12.2539090
Show Author Affiliations
Zhiguo Han, Hebei Semiconductor Research Institute (China)
Faguo Liang, Hebei Semiconductor Research Institute (China)
Suoyin Li, Hebei Semiconductor Research Institute (China)
Yanan Feng, Hebei Semiconductor Research Institute (China)
Xiaodong Zhang, Hebei Semiconductor Research Institute (China)


Published in SPIE Proceedings Vol. 11189:
Optical Metrology and Inspection for Industrial Applications VI
Sen Han; Toru Yoshizawa; Song Zhang; Benyong Chen, Editor(s)

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