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Proceedings Paper

A bonded template-assisted monolithic integration platform
Author(s): Yingtao Hu; Di Liang; Geza Kurczveil; Raymond G. Beausoleil
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Paper Abstract

We present room-temperature continuous-wave lasing of 1.31 μm multi-quantum well lasers on a novel defect-free heterogeneous III-V-on-silicon integration platform. The epitaxially grown laser structure on the platform shows significantly low dislocation density of 9.5×104 cm-2, leading to a minimal threshold current density of 813 A/cm2. These results bring promise to create multi functionalities like source, modulation and detection, etc. on such a defect-free, low-cost, large-scale substrate for Datacom applications.

Paper Details

Date Published: 19 November 2019
PDF: 5 pages
Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 111840O (19 November 2019); doi: 10.1117/12.2539077
Show Author Affiliations
Yingtao Hu, Hewlett Packard Enterprise (United States)
Di Liang, Hewlett Packard Enterprise (United States)
Geza Kurczveil, Hewlett Packard Enterprise (United States)
Raymond G. Beausoleil, Hewlett Packard Enterprise (United States)

Published in SPIE Proceedings Vol. 11184:
Optoelectronic Devices and Integration VIII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang; Daoxin Dai, Editor(s)

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