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Proceedings Paper

InGaN/GaN MQWs green-light photodetectors with thin GaN barrier layers
Author(s): Supeng Zhang; Hongxia Wang; Hailong Wang; Hao Jiang
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Paper Abstract

Green light InGaN photodiodes based on 21-periods In0.31Ga0.69N/GaN MQWs with 6-nm-thick barriers were fabricated and characterized. The fabricated devices show a spectral response cutoff of more than three orders of magnitude by 540 nm. Dark current as low as 2.65×10-14 A was measured at 5 V reverse bias. Responsivity of 69.0 mA/W was obtained at ~490 nm and -5 V bias under the back illumination condition, corresponding to an external quantum efficiency of 12.8 %.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 1133403 (18 December 2019); doi: 10.1117/12.2539045
Show Author Affiliations
Supeng Zhang, Sun Yat-Sen Univ. (China)
Hongxia Wang, Sun Yat-Sen Univ. (China)
Hailong Wang, Sun Yat-Sen Univ. (China)
Hao Jiang, Sun Yat-Sen Univ. (China)


Published in SPIE Proceedings Vol. 11334:
AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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