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Bandwidth optimization of germanium-doped silicon optical modulator for high-speed applications
Author(s): Darpan Mishra; Manoranjan Minz; Ramesh Kumar Sonkar; Mohd. Mansoor Khan
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Paper Abstract

This paper analyzes a germanium-doped silicon traveling wave Mach-Zehnder modulator (TWMZM) for high speed operation at 1550 nm wavelength. Single arm drive modulator performance using non-return-to-zero on-off keying (NRZ-OOK) driving scheme has been investigated. The phase-loss characteristics of the graded-index silicon-germanium PN phase shifter have been determined numerically. The traveling wave electrode has been designed for 1.5 mm long phase shifter. The 3 dB modulation bandwidth of the designed TWMZM is calculated to be 31 GHz at -2 V and an error-free operation of 59 Gbps has been obtained for 2 V peak-to-peak drive voltage with an extinction of ~6 dB.

Paper Details

Date Published: 19 November 2019
PDF: 6 pages
Proc. SPIE 11193, Nanophotonics and Micro/Nano Optics V, 111930T (19 November 2019); doi: 10.1117/12.2538873
Show Author Affiliations
Darpan Mishra, Indian Institute of Technology Guwahati (India)
Manoranjan Minz, Indian Institute of Technology Guwahati (India)
Ramesh Kumar Sonkar, Indian Institute of Technology Guwahati (India)
Mohd. Mansoor Khan, Indian Institute of Technology Guwahati (India)
Indian Institute of Information Technology Guwahati (India)


Published in SPIE Proceedings Vol. 11193:
Nanophotonics and Micro/Nano Optics V
Zhiping Zhou; Kazumi Wada; Limin Tong, Editor(s)

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