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Few cycle pulse laser induced damage studies of gallium oxide and gallium nitride (Conference Presentation)
Author(s): Brandon Harris

Paper Abstract

The laser damage thresholds for gallium nitride and gallium oxide were found after exposing each sample to a femtosecond laser pulse. Threshold fluences were determined for both single pulse and multi pulse exposures. To accurately characterize the excited carrier density criteria in which visible laser damage occurs, we simulated carrier excitation dynamics for the entire laser pulse as it interacts with the target using the Keldysh model. From this a dynamic model of the conduction band carrier concentration was determined. For the measured single shot threshold fluences, the plasma critical density criteria for damage was met.

Paper Details

Date Published: 26 November 2019
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Proc. SPIE 11173, Laser-induced Damage in Optical Materials 2019, 111730F (26 November 2019); doi: 10.1117/12.2538819
Show Author Affiliations
Brandon Harris, The Ohio State Univ. (United States)


Published in SPIE Proceedings Vol. 11173:
Laser-induced Damage in Optical Materials 2019
Christopher Wren Carr; Vitaly E. Gruzdev; Detlev Ristau; Carmen S. Menoni, Editor(s)

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