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Proceedings Paper

A silicon-graphene hybrid waveguide photodetector with a 3dB-bandwidth of 17 GHz
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Paper Abstract

A graphene photodetector based on ultra-thin silicon waveguide at 1.55μm is proposed. By reducing the silicon core thickness, the fundamental TE waveguide mode is less confined and light-graphene interaction is enhanced. Benefiting from the ultrathin silicon waveguide and reflector structure, the graphene absorption coefficient reaches 0.36 dB/μm. A 10nm-thick CVD-grown hexagonal boron nitride is covered on the graphene to improve the device performance. With the help of metal-graphene-metal structure, the contact resistance is reduced dramatically. The devices have shown a responsivity of 1.4 mA/W at 0 V bias and 23.1 mA/W at 0.3 V bias with 0.24 mW input optical power. The measured 3-dB bandwidth is 17GHz under 0V bias voltage at 1550 nm.

Paper Details

Date Published: 19 November 2019
PDF: 7 pages
Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 111840K (19 November 2019); doi: 10.1117/12.2538719
Show Author Affiliations
Jiang Li, Zhejiang Univ. (China)
Yanlong Yin, Zhejiang Univ. (China)
Jingshu Guo, Zhejiang Univ. (China)
Chaoyue Liu, Zhejiang Univ. (China)
Daoxin Dai, Zhejiang Univ. (China)

Published in SPIE Proceedings Vol. 11184:
Optoelectronic Devices and Integration VIII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang; Daoxin Dai, Editor(s)

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