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Proceedings Paper

Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)

Paper Abstract

To meet industry demand for EUV materials testing capabilities down to the 2 nm lithography node, the EUV Photoresist Testing Center at Berkeley Lab has been expanded to include a 8-nm resolution, 0.5-NA EUV microfield exposure system with robotic sample processing tailed for research. This paper provides an overview of the capabilities and performance of the 0.5-NA EUV exposure system and discusses printing results since user commissioning shifts began in Q2 2019.

Paper Details

Date Published: 16 October 2019
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Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114712 (16 October 2019); doi: 10.1117/12.2538717
Show Author Affiliations
Christopher N. Anderson, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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