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Investigation on tuning of WS2/SiC band gap with an external electric field
Author(s): Yuke Ma; Xian'gang Xu
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Paper Abstract

An optical material WS2 thin film on SiC substrate was synthesized. Both 15nm and 150nm thickness of WS2 films were deposited on a n-doped SiC substrate by pulsed laser deposition (PLD) method. Tungsten disulfide films were superimposed face to face, and silicon carbide was used as the electrode to apply an electric field ranging from 0V/nm to 0.18v /nm. The experimental results showed that band gap were continuously tunable from 2.017ev to 1.507ev. The first principle calculation by using Quantum Espresso also was performed to simulate the band gap change with the increase of an external electric field. It is found that the band gap of WS2/SiC film changes from 1.973ev to 1.488ev as an electric field applied perpendicularly to the film ranging from 0V/nm to 0.18v /nm. The consistency of experimental results and the first principle calculation was found.

Paper Details

Date Published: 8 July 2019
PDF: 8 pages
Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 1106407 (8 July 2019); doi: 10.1117/12.2538565
Show Author Affiliations
Yuke Ma, Shandong Univ. (China)
Xian'gang Xu, Shandong Univ. (China)


Published in SPIE Proceedings Vol. 11064:
Tenth International Conference on Thin Film Physics and Applications (TFPA 2019)
Junhao Chu; Jianda Shao, Editor(s)

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