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Proceedings Paper

Resistive switching memory devices based on PbS quantum dots
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Paper Abstract

Quantum dots have widely used in a lot of micro-nano photoelectric devices. In this work, PbS quantum dots have been synthesized successfully then a RRAM based on those quantum dots and PMMA mixture material was prepared by solution processed method at room temperature. We have demonstrated that the memory device shows typical resistance switching characteristic and high resistance ratio ( >104). To study the quantum dots based RRAM provides an opportunity to develop the next generation high-performance memory devices and open up a new application field of QDs materials in the future.

Paper Details

Date Published: 19 November 2019
PDF: 6 pages
Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 1118416 (19 November 2019); doi: 10.1117/12.2538555
Show Author Affiliations
Zhiliang Chen, Tianjin Univ. (China)
Yating Zhang, Tianjin Univ. (China)
Yu Yu, Tianjin Univ. (China)
Lufan Jin, Tianjin Univ. (China)
Yifan Li, Tianjin Univ. (China)
Jianquan Yao, Tianjin Univ. (China)

Published in SPIE Proceedings Vol. 11184:
Optoelectronic Devices and Integration VIII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang; Daoxin Dai, Editor(s)

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