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Estimation of refractive index profiles of vertically aligned disordered silicon nanowires for photon management applications
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Paper Abstract

We discuss a promising method to assess the refractive index profile of vertically aligned disordered Silicon nanowire arrays. The aberration-free micro-reflectivity set-up equipped with an in-situ optical microscope is designed to measure the reflectivity from 4μm2 area of the nanowires. The spatial- and polarization-dependent reflectivity values along the nanowire length is used to estimate the refractive index profile. The transfer matrix method involving the estimated refractive index profiles is employed to corroborate the measured reflectivity values. The disordered Silicon nanowires with gradient refractive index profile can suppress 96 % reflectivity irrespective of direction, wavelength, and polarization which make them a potential candidate for photon management applications.

Paper Details

Date Published: 31 December 2019
PDF: 2 pages
Proc. SPIE 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019, 112010R (31 December 2019); doi: 10.1117/12.2538476
Show Author Affiliations
Sudhir Kumar Saini, Indian Institute of Technology Ropar (India)
Rajesh V. Nair, Indian Institute of Technology Ropar (India)


Published in SPIE Proceedings Vol. 11201:
SPIE Micro + Nano Materials, Devices, and Applications 2019
M. Cather Simpson; Saulius Juodkazis, Editor(s)

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