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Proceedings Paper

Adopting curvilinear shapes for production ILT: challenges and opportunities
Author(s): Ryan Pearman; Jeff Ungar; Nagesh Shirali; Abishek Shendre; Mariusz Niewczas; Leo Pang; Aki Fujimura
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Paper Abstract

We have recently demonstrated that curvilinear shapes and multi-beam mask writing are necessary to minimize the impact of mask variability on wafer hotspots. Several key challenges and opportunities remain. We ask how we update mask-inspection rules, and how we correct for mask-process systematics for extreme ultraviolet (EUV), where the optical response must be taken into account. This paper proposes updated mask rule checks (MRC), derived from a mask variability perspective. We also demonstrate the need for MRC-aware inverse lithography technology (ILT) metrics as a pre-requisite to ensure the reticle shapes are what the wafer-side lithographer desires. Armed with a fully curvilinear ILT and mask data preparation (MDP) system, there is an opportunity to relax the restrictions on fully Manhattan designs where possible.

Paper Details

Date Published: 10 October 2019
PDF: 14 pages
Proc. SPIE 11148, Photomask Technology 2019, 111480T (10 October 2019); doi: 10.1117/12.2538445
Show Author Affiliations
Ryan Pearman, D2S, Inc. (United States)
Jeff Ungar, D2S, Inc. (United States)
Nagesh Shirali, D2S, Inc. (United States)
Abishek Shendre, D2S, Inc. (United States)
Mariusz Niewczas, D2S, Inc. (United States)
Leo Pang, D2S, Inc. (United States)
Aki Fujimura, D2S, Inc. (United States)


Published in SPIE Proceedings Vol. 11148:
Photomask Technology 2019
Jed H. Rankin; Moshe E. Preil, Editor(s)

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