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Proceedings Paper

Theory of photoreactive effect in bipolar and MOSFET transistors
Author(s): Alexander V. Osadchuk; Vladimir S. Osadchuk; Iaroslav A. Osadchuk; Olena O. Seletska; Piotr Kisała; Karlygash Nurseitova
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Paper Abstract

The paper deals with the fundamentals of the theory of photoreactive effect in bipolar and field-effect transistor structures. Photoreactive properties of semiconductor devices are widely used in a variety of radio electronics devices. Therefore, the study of these phenomena in bipolar transistor structures with negative resistance, allows us to create new sensory devices, which have better parameters than existing ones. The method of construction of radiomeasuring microelectronic transducers is offered on the base of photoreactive effect in sensing bipolar and field transistor structures, that has established premises for embodying transducers of optical radiation with a frequency output signal.

Paper Details

Date Published: 6 November 2019
PDF: 12 pages
Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111761I (6 November 2019); doi: 10.1117/12.2538264
Show Author Affiliations
Alexander V. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Vladimir S. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Iaroslav A. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Olena O. Seletska, Vinnytsia National Technical Univ. (Ukraine)
Piotr Kisała, Lublin Univ. of Technology (Poland)
Karlygash Nurseitova, D. Serikbayev East Kazakhstan State Technical Univ. (Kazakhstan)


Published in SPIE Proceedings Vol. 11176:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019
Ryszard S. Romaniuk; Maciej Linczuk, Editor(s)

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