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Proceedings Paper

Evaluation of local CD and placement distribution on EUV mask and its impact on wafer
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Paper Abstract

The mask is a known contributor to intra-field fingerprints at the wafer level. Traditionally, a 3σ distribution of critical dimensions (CDs) on mask was considered sufficient to characterize the contribution to the CD distribution at wafer level. Recent studies report wafer local CD distributions characterized for statistics beyond 3σ1. Mask has been shown to contribute to wafer local CD distribution also which is typically quantified as Local CD Uniformity (LCDU), a 3σ metric2. Additionally, the local placement distribution on wafer could be a contributor to Edge Placement Error (EPE)3. Consequently, it is imperative to understand, characterize and ultimately control the mask contributions to local CD and placement distribution at wafer level. This work is an investigation of local CD and placement distribution on an EUV mask and its impact on distributions at wafer level.

Paper Details

Date Published: 27 June 2019
PDF: 7 pages
Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 1117807 (27 June 2019); doi: 10.1117/12.2538243
Show Author Affiliations
Vidya Vaenkatesan, ASML Netherlands B.V. (Netherlands)
Paul van Adrichem, ASML Netherlands B.V. (Netherlands)
Marleen Kooiman, ASML Netherlands B.V. (Netherlands)
Michael Kubis, ASML Netherlands B.V. (Netherlands)
Lieve van Look , IMEC (Belgium)
Andreas Frommhold, IMEC (Belgium)
Emily Gallagher, IMEC (Belgium)
DS Nam, ASML Netherlands B.V. (Netherlands)
Jan Mulkens, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 11178:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology
Akihiko Ando, Editor(s)

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