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Actinic patterned mask defect inspection for EUV lithography
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Paper Abstract

As extreme ultraviolet (EUV) lithography enters high volume manufacturing, the semiconductor industry has considered a lithography-wavelength-matched actinic patterned mask inspection (APMI) tool to be a major remaining EUV mask infrastructure gap. Now, an actinic patterned mask inspection system has been developed to fill this gap. Combining experience gained from developing and commercializing the 13.5nm wavelength actinic blank inspection (ABI) system with decades of deep ultraviolet (DUV) patterned mask defect inspection system manufacturing, we have introduced the world’s first high-sensitivity actinic patterned mask inspection and review system, the ACTIS A150 (ACTinic Inspection System). Producing this APMI system required developing and implementing new technologies including a high-intensity EUV source and high-numerical aperture EUV optics. The APMI system achieves extremely high sensitivity to defects because of its high-resolution, low noise imaging. It has demonstrated a capability to detect mask defects having an estimated lithographic impact of 10% CD deviation on the printed wafer.

Paper Details

Date Published: 25 November 2019
PDF: 9 pages
Proc. SPIE 11148, Photomask Technology 2019, 111480W (25 November 2019); doi: 10.1117/12.2538001
Show Author Affiliations
Hiroki Miyai, Lasertec Corp. (Japan)
Tsunehito Kohyama, Lasertec Corp. (Japan)
Tomohiro Suzuki, Lasertec Corp. (Japan)
Kiwamu Takehisa, Lasertec Corp (Japan)
Haruhiko Kusunose, Lasertec Corp. (Japan)


Published in SPIE Proceedings Vol. 11148:
Photomask Technology 2019
Jed H. Rankin; Moshe E. Preil, Editor(s)

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