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Proceedings Paper

Characterization of quartz etched depth and optical density of opaque pattern for the wafer CD behavior on advanced mask
Author(s): William Chou; Jeffrey Cheng; C. H. Twu; Adder Lee; Chih Hsuan Chao; Xin Ren Yu; Po Tsang Chen; Edgar Huang; Junjin Lin; Sweet Chen; James Cheng; Colbert Lu; Josh Tzeng; Jackie Cheng; Heng Jen Lee; Young Ham
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Paper Abstract

In this paper we perform a foundational study on the impact of quartz etched depth, and optical density (OD) of mask opaque area, the 3D effect in ArF immersion lithography at advanced process node. The after development inspection (ADI) critical dimension (CD) variation may be caused by these 2 mentioned factors on the photomask, even the mask CD value of the measurement point is the same. Different cleaners and etchers which fix the same cleaning and etching time, induce different OD of reticle opaque patterns and several quartz etched depths. The relations between OD of reticle opaque patterns / quartz etched depth and ADI CD are the significant subject for successful pilot run which may moderate pilot run time and reduce rework costs in the lithography process. The focus of this study is the characterization of the correlation between OD of reticle opaque patterns / etched quartz depths and ADI CD. We experimentally study the structures from the theoretical introduction on the mask 3D phenomena, all of results are obtained using a MoSi binary ArF blank. A comprehensive wafer CD measurement result will be demonstrated in different OD of reticle opaque patterns and etched quartz depth, both simulation and experimentally based. The effect of fabricating the photomask quartz trenches will also be studied as well as the impact on through pitch CD and exposure latitude. The goal of this study is the demonstration of the practical influence on mask OD and the etched quartz depth of leading edge photomasks.

Paper Details

Date Published: 26 September 2019
PDF: 9 pages
Proc. SPIE 11148, Photomask Technology 2019, 111481I (26 September 2019); doi: 10.1117/12.2537938
Show Author Affiliations
William Chou, United Microelectronics Corp. (Taiwan)
Jeffrey Cheng, United Microelectronics Corp. (Taiwan)
C. H. Twu, United Microelectronics Corp. (Taiwan)
Adder Lee, United Microelectronics Corp. (Taiwan)
Chih Hsuan Chao, United Microelectronics Corp. (Taiwan)
Xin Ren Yu, United Microelectronics Corp. (Taiwan)
Po Tsang Chen, United Microelectronics Corp. (Taiwan)
Edgar Huang, United Microelectronics Corp. (China)
Junjin Lin, United Microelectronics Corp. (Taiwan)
Sweet Chen, United Microelectronics Corp. (Taiwan)
James Cheng, United Microelectronics Corp. (Taiwan)
Colbert Lu, Photronics DNP Semiconductor Mask Corp. (Taiwan)
Josh Tzeng, Photronics DNP Semiconductor Mask Corp. (Taiwan)
Jackie Cheng, Photronics DNP Semiconductor Mask Corp. (Taiwan)
Heng Jen Lee, Photronics DNP Semiconductor Mask Corp. (Taiwan)
Young Ham, Photronics, Inc. (United States)


Published in SPIE Proceedings Vol. 11148:
Photomask Technology 2019
Jed H. Rankin; Moshe E. Preil, Editor(s)

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