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Proceedings Paper

Electron dynamic analysis of few-cycle laser-induced damage (Conference Presentation)
Author(s): Yingjie Chai; MJ Soileau

Paper Abstract

Our work simulated the electron dynamic process based on different models, field-cycle-resolved photoionization theory and Keldysh theory. The central idea for predicting laser-induced damage threshold of few-cycle laser pulse based on the total laser energy coupled with the electron energy transfer in the crystal lattice. With this approach, predictions of the physical model start to converge to the available experimental data of 1-on-1 few-cycle laser damage experiments on the semiconductor (e.g. ZnSe) surface.

Paper Details

Date Published: 3 December 2019
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Proc. SPIE 11173, Laser-induced Damage in Optical Materials 2019, 111730C (3 December 2019); doi: 10.1117/12.2537871
Show Author Affiliations
Yingjie Chai, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
MJ Soileau, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 11173:
Laser-induced Damage in Optical Materials 2019
Christopher Wren Carr; Vitaly E. Gruzdev; Detlev Ristau; Carmen S. Menoni, Editor(s)

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