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An analysis of EUV resist stochastic printing failures
Author(s): M. I. Sanchez; G. M. Wallraff; N. Megiddo; W. D. Hinsberg
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Paper Abstract

A simple physicochemical description of stochastic printing failures is discussed. By combining this with combinatorial calculations of resist imaging chemistry and Monte Carlo analysis, estimates of the rates of random printing failures in nanoscale lithography can be made. This approach, based solely on component and photon statistics, provides results consistent with experimental reports. The method provides a general framework for predicting impacts of resist formulation, compositional and process changes on printing failures.

Paper Details

Date Published: 26 September 2019
PDF: 16 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114717 (26 September 2019); doi: 10.1117/12.2537632
Show Author Affiliations
M. I. Sanchez, IBM Research - Almaden (United States)
G. M. Wallraff, IBM Research - Almaden (United States)
N. Megiddo, IBM Research - Almaden (United States)
W. D. Hinsberg, Columbia Hill Technical Consulting (United States)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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