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Proceedings Paper

High-power 685nm laser diode array with 300W output power and 40% conversion efficiency
Author(s): Wei Xia; Zhen Zhu; Beichao Kai; Shuang Yao; Xiangang Xu
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Paper Abstract

High power AlGaInP laser diodes (LDs) and bars emitting at about 685 nm have been fabricated. The epitaxial structures, including the AlInP cladding layer, asymmetric waveguide and single compressive-strained quantum well, were designed to optimize the thermal performance. The transparent window structure formed by Zn diffusion was employed to increase the output power of AlGaInP LDs. A maximum power of 4.9 W was realized for the single emitter LDs without catastrophic optical damage. Using micro-channel heat sinks, an array stacked with six 1-cm bars showed an output power of more than 300 W with 40% conversion efficiency.

Paper Details

Date Published: 19 November 2019
PDF: 5 pages
Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 111820W (19 November 2019); doi: 10.1117/12.2537578
Show Author Affiliations
Wei Xia, Univ. of Jinan (China)
Shandong Huaguang Optoelectronics Co., Ltd. (China)
Zhen Zhu, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Beichao Kai, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Shuang Yao, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Xiangang Xu, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Shandong Univ. (China)


Published in SPIE Proceedings Vol. 11182:
Semiconductor Lasers and Applications IX
Ning Hua Zhu; Werner H. Hofmann; Jian-Jun He, Editor(s)

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