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Development of a 780nm narrow line width semiconductor laser device
Author(s): Fei Wu; Haocheng Sun; Chensheng Wang; Zhiqiang Qi
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Paper Abstract

For the requirement of cold atom interference technology, a 780nm narrow line width extended cavity diode laser device is developed and verified. Based on the simulation modeling of extended cavity and light beam, the laser structure, hermetic package, hybrid integration process and thermal control design is introduced. Then the integration of LD and multiple micro-optical elements are realized with a self-building integration platform, and the die-bonding process is also indicated in details. Finally, the integrated device is tested and verified to have 100KHz line width in 780.24nm, with a 50mW output power.

Paper Details

Date Published: 19 November 2019
PDF: 6 pages
Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 111820C (19 November 2019); doi: 10.1117/12.2537424
Show Author Affiliations
Fei Wu, Central China Normal Univ. (China)
Huazhong Institute of Electro-Optics (China)
Haocheng Sun, Huazhong Institute of Electro-Optics (China)
Chensheng Wang, Huazhong Institute of Electro-Optics (China)
Zhiqiang Qi, Huazhong Institute of Electro-Optics (China)


Published in SPIE Proceedings Vol. 11182:
Semiconductor Lasers and Applications IX
Ning Hua Zhu; Werner H. Hofmann; Jian-Jun He, Editor(s)

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