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Proceedings Paper

Scalable growth of atomically thin BN: an ultra-wide band gap material (Conference Presentation)
Author(s): Michael Snure; Gene Siegel; Stefan Badescu

Paper Abstract

In the expanding field of 2D, hBN serves as the 2D insulator finding application as a non-interacting substrate, passivation layer, and gate dielectric for use with 2D semiconductors, as well as, for deep UV emitters and single-photon sources. This has driven research into synthesis methods for controlled growth form mono to many layer thick films. Here we present on growth of mono to few layer hBN by metal organic vapor phase epitaxy on various substrates from sapphire to transition metals. Models describing growth chemistry for these various substrates are described. The effects growth conditions on properties will also be discussed.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020K (9 March 2020); doi: 10.1117/12.2537408
Show Author Affiliations
Michael Snure, Air Force Research Lab. (United States)
Gene Siegel, Air Force Research Lab. (United States)
Stefan Badescu, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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