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Proceedings Paper

3D NIR laser night vision based on gated range-intensity correlation imaging
Author(s): Xinwei Wang Sr.; Liang Sun; Xin Zhong; Pingshun Lei; Han Dong; Songtao Fan; Jianan Chen; Yuqing Yang; Jun He; Yan Zhou; Pan Huang; Maozhong Li
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Paper Abstract

Traditional NIR laser night vision systems can only obtain 2D images without target range information, and are also easily affected by fog, rain, snow and foreground/background. To solve the problems above, 3D laser night vision based on range-gated imaging has been developed. This paper reviews 3D range-gated imaging advances and focuses on 3D rangeintensity correlation imaging (GRICI) due to its better real time performance and higher spatial resolution. In GRICI systems, the typical illuminator is eye-invisible pulsed semiconductor laser, and the image sensor chooses gated ICCD or ICMOS with mega pixels and ns-scaled gate time. To realize 3D night vision, two overlapped gate images with trapezoidal or triangular range-intensity profiles are grasped by synchronizing the puled laser and the gated sensor. The collapsed range is reconstructed by the range-intensity correlation algorithm, and furthermore 2D and 3D images can both be obtained at the same frame rate. We have established 3D NIR night vision systems based on triangular GRICI, and the experimental results demonstrate that 3D images realize target extraction from background and through windows or smoke. The range resolution minimum is about less than 0.2m at the range of 1km in our GRICI-NV3000, and the range maximum of 3D imaging is about 5km in our GRICI-NV6000.

Paper Details

Date Published: 19 November 2019
PDF: 10 pages
Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 111820I (19 November 2019); doi: 10.1117/12.2537121
Show Author Affiliations
Xinwei Wang Sr., Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Liang Sun, Institute of Semiconductors (China)
Xin Zhong, Institute of Semiconductors (China)
Pingshun Lei, Institute of Semiconductors (China)
Han Dong, Institute of Semiconductors (China)
Songtao Fan, Institute of Semiconductors (China)
Jianan Chen, Institute of Semiconductors (China)
Yuqing Yang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Jun He, Institute of Semiconductors (China)
Yan Zhou, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Pan Huang, Yunnan KIRO-CH Photonics Co., Ltd. (China)
Maozhong Li, Yunnan KIRO-CH Photonics Co., Ltd. (China)

Published in SPIE Proceedings Vol. 11182:
Semiconductor Lasers and Applications IX
Ning Hua Zhu; Werner H. Hofmann; Jian-Jun He, Editor(s)

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