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Proceedings Paper

Resolution enhancement for lensless mask metrology with RESCAN
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Paper Abstract

The EUV photomask is a key component of the lithography process for semiconductor manufacturing. A critical defect on the mask could be replicated on several wafers, causing a significant production yield reduction. For this reason, actinic patterned mask inspection is an important metrology component for EUV lithography. The RESCAN microscope is a lensless imaging platform dedicated to EUV mask defect inspection and metrology. The resolution of the tool is about 35 nm, which is similar to that of state-of-the-art EUV microscopes. To improve the resolution of RESCAN, we designed an upgraded optical layout for the illumination system and we developed a coherent diffraction imaging-compatible method to synthesize a custom pupil structure. This new scheme will enable a lensless EUV microscope with a resolution down to 20 nm and thereby allow mask review capabilities for future technology nodes with EUV lithography.

Paper Details

Date Published: 29 September 2019
PDF: 8 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471D (29 September 2019); doi: 10.1117/12.2537068
Show Author Affiliations
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Uldis Locans, Paul Scherrer Institut (Switzerland)
Atoosa Dejkameh, Paul Scherrer Institut (Switzerland)
Ricarda Nebling, Paul Scherrer Institut (Switzerland)
Dimitrios Kazazis, Paul Scherrer Institut (Switzerland)
Li-Ting Tseng, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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