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EUV reticle inspection using phase retrieval algorithms: a performance comparison
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Paper Abstract

RESCAN is an actinic patterned EUV mask metrology tool based on coherent diffraction imaging. An image of the reticle is reconstructed from recorded diffraction patterns using a phase retrieval algorithm. As semiconductor manufacturing has moved to EUV lithography to meet the next technology node, accurate photomask metrology with resolution in the nanometer range is crucial for high production yield. To find the optimal reconstruction strategy to achieve the highest resolution, sensitivity and reconstruction speed in RESCAN, we compared three algorithms. We demonstrate that, for the current setup, the best approach is the difference map algorithm.

Paper Details

Date Published: 29 September 2019
PDF: 7 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111470R (29 September 2019); doi: 10.1117/12.2536936
Show Author Affiliations
Ricarda Nebling, Paul Scherrer Institut (Switzerland)
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Dimitrios Kazazis, Paul Scherrer Institut (Switzerland)
Uldis Locans, Paul Scherrer Institut (Switzerland)
Atoosa Dejkameh, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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