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Proceedings Paper

Progress overview of EUV resists status towards high-NA EUV lithography
Author(s): Xiaolong Wang; Li-Ting Tseng; Iacopo Mochi; Michaela Vockenhuber; Lidia van Lent-Protasova; Rolf Custers; Gijsbert Rispens; Rik Hoefnagels; Yasin Ekinci
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Paper Abstract

We investigated how the processing parameters, including post exposure baking (PEB), and resist film thickness (FT) influence the dose and line width roughness (LWR) of different types of EUV resists, targeted for the high-NA EUV lithography. We compared the dose and LWR of molecular, inorganic and CAR resists at half-pitch (HP) of 16 and 14 nm for different PEB temperatures. The results show that without PEB or at lower PEB temperature, resists require higher doses, as expected. We also observed the different behavior of various resist platforms in response to variation of the film thickness. The results showed that there is a room for the optimization of the processing parameters to improve dose and LWR of molecular, inorganic and CAR resists for line/space printing at high resolution.

Paper Details

Date Published: 9 October 2019
PDF: 10 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114711 (9 October 2019); doi: 10.1117/12.2536923
Show Author Affiliations
Xiaolong Wang, Paul Scherrer Institut (Switzerland)
Li-Ting Tseng, Paul Scherrer Institut (Switzerland)
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institut (Switzerland)
Lidia van Lent-Protasova, ASML Netherlands B.V. (Netherlands)
Rolf Custers, ASML Netherlands B.V. (Netherlands)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Rik Hoefnagels, ASML Netherlands B.V. (Netherlands)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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