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Proceedings Paper

Numerical simulation of the effects of InAlSb barrier layers on the InSb mid-infrared photodetectors on a mismatched substrate
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Paper Abstract

Epitaxial growth of a high-quality InSb layer on a mismatched substrate which provides a path to monolithically integrate InSb-based photonic devices and Si/GaAs-based electronic devices on a single wafer. This work is an attempt to investigate the effects of In0.9Al0.1Sb electron barrier layers on the electrical and optical properties of the InSb photodetectors on a mismatched substrate. The structure of InSb photodetector is p-i-n type where i-layer is the unintentionally n-type doped. A 25 nm In0.9Al0.1Sb layer locates in the i-layer. At 77 K, InAlSb barrier can effectively decrease dark current due to it completely suppresses the generation and recombination current and tunneling current and partially suppresses the diffusion current. The different dark current mechanisms (diffusion, generation and recombination, tunneling) are discussed associated with the bandgap diagrams. For the simulation of photoresponse, the incident light is set to be 5.3 μm. At 77 K, the existence of InAlSb layer doesn’t influence the absorption of incident light due to its limited thickness, however, the InAlSb layer separates the i-layer and impedes the transportation of electrons. Therefore, the InAlSb layer decrease the photoresponse of InSb detector and its effects is more remarkable when the diffusion length of hole is around 5 μm or its location is near the surface of the detector. According to the simulation, optimizing the location of the In0.9Al0.1Sb is important to increase the performance of InSb photodetectors on a mismatched substrate.

Paper Details

Date Published: 19 November 2019
PDF: 7 pages
Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 1118411 (19 November 2019); doi: 10.1117/12.2536915
Show Author Affiliations
Zhiqin Zhao, Wuhan Univ. of Technology (China)
Xu Qian, Wuhan Univ. of Technology (China)
Bowen Wang, Wuhan Univ. of Technology (China)
Bowen Jia, Wuhan Univ. of Technology (China)


Published in SPIE Proceedings Vol. 11184:
Optoelectronic Devices and Integration VIII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang; Daoxin Dai, Editor(s)

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