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Precision fabrication of EUVL programmed defects with helium ion beam lithography
Author(s): Chien-Lin Lee; Jia-Syun Cai; Sheng-Wei Chien; Kuen-Yu Tsai
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Paper Abstract

The availability of metrology solutions, one of the critical factors to drive leading-edge semiconductor devices and processes, can be confronted with difficulties in the advanced nodes. For developing new metrology solutions, highquality test structures fabricated at specific sizes are needed. Electron-beam direct-write lithography has been utilized to manufacture such samples. However, it can encounter significant-resolution difficulties and require complicated process optimization in sub-10-nm nodes. This study investigates the feasibility and patterning control of metrology test structure fabrication by helium-ion-beam direct-write lithography (HIBDWL). Features down to IRDS 1.5-nm node are resolvable without needing any resolution enhancement technique from the lithography simulation. Further, patterns beyond 1.5-nm node can be achievable with the help of proximity effect correction technique. Preliminary results of simulation demonstrate that HIBDWL can be a promising alternative for fabricating programmed defects (PDs) and test structure to develop advanced metrology solutions in sub-7-nm nodes.

Paper Details

Date Published: 1 October 2019
PDF: 7 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471J (1 October 2019); doi: 10.1117/12.2536874
Show Author Affiliations
Chien-Lin Lee, National Taiwan Univ. (Taiwan)
Jia-Syun Cai, National Taiwan Univ. (Taiwan)
Sheng-Wei Chien, National Taiwan Univ. (Taiwan)
Kuen-Yu Tsai, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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