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Growth and preliminary characterization of InAsSb photodiodes for mid-wave infrared detection
Author(s): Kordian Lipski; Łukasz Kubiszyn; Krystian Michalczewski; Krzysztof Murawski; Piotr Martyniuk
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Paper Abstract

This paper reports on the growth details and preliminary characterization of mid-wave infrared radiation InAsSb bariodes. The main device parameters were measured for barrier photodetector heterostructures with three different InAsSb absorber thicknesses: 1 µm (sample no. 1); 1.70 μm (sample no. 2); 2.56 μm (sample no. 3) and one non intentionally doped, 1.70 μm (sample no. 4). The crystallographic structure, responsivity, I-V curves and detectivity characterization were performed.

Paper Details

Date Published: 13 September 2019
PDF: 4 pages
Proc. SPIE 11204, 14th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 112040E (13 September 2019); doi: 10.1117/12.2536801
Show Author Affiliations
Kordian Lipski, Military Univ. of Technology (Poland)
Łukasz Kubiszyn, Military Univ. of Technology (Poland)
Vigo System S. A. (Poland)
Krystian Michalczewski, Vigo System S. A. (Poland)
Krzysztof Murawski, Military Univ. of Technology (Poland)
Piotr Martyniuk, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 11204:
14th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Przemyslaw Struk; Tadeusz Pustelny, Editor(s)

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